酸奶冰淇淋�:

Different from the Si MOSFET, the SiC MOSFET has a more

significant drain-induced barrier lowering (DIBL), which is

caused by the short-channel effect [26], [28]. When the length

of the channel reduces to a certain value, the proportion of the

depletion between the p-base and n−drift region will increase

evidently. Therefore, the threshold voltage VTH will be reduced

as there is no need to attract as many charges as before to form

the channel. The expression of the voltage-controlled channel

current ich(vgs) is shown in (5). It is obvious that the reduction

of VTH will cause an increase in vgs, when the load current

conducted by the channel is constant

ich(vgs) = gf s(vgs − VTH) (5)

一篇论文里截取的，论文里应该说错了吧，Vth增加才会导致Vgs增加吧